A wafer-capped, high-lifetime ohmic MEMS RF switch
作者： J. Lampen , J. Maciel , R. Morrison , A. Chaudhry , S. Majumder
DOI: 10.1002/MMCE.V14:4
关键词: Frit 、 Microwave 、 RF switch 、 Microelectromechanical systems 、 Cantilever 、 Wafer 、 Optoelectronics 、 Materials science 、 Electrical engineering 、 Insertion loss 、 Ohmic contact
摘要: An electrostatically actuated broadband ohmic microswitch has been developed for RF and microwave applications. The switch is a three-terminal device based on cantilever beam fabricated using an all-metal, surface-micromachining process. It operates in hermetic environment obtained through glass frit wafer-bonding lifetimes greater than 1010 cycles have achieved the wafer capped switch. Typical insertion loss isolation 2-contact at 10 GHz are 0.4 20 dB, respectively, while 8-contact yields of 0.2 dB 27 2 GHz, respectively. © 2004 Wiley Periodicals, Inc. Int J Microwave CAE 14: 338–344, 2004.
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