Chemically prepared well-ordered InP(0 0 1) surfaces
作者： O.E. Tereshchenko , D. Paget , P. Chiaradia , E. Placidi , J.E. Bonnet
DOI: 10.1016/J.SUSC.2006.05.056
关键词: Passivation 、 Desorption 、 Chemistry 、 Oxide 、 Low-energy electron diffraction 、 Epitaxy 、 Annealing (metallurgy) 、 Overlayer 、 Crystallography 、 Electron diffraction
摘要: In the present work HCl-isopropanol treated and vacuum annealed InP(0 0 1) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), reflectance anisotropy (RAS) spectroscopies. The treatment removes natural oxide leaves on surface a physisorbed overlayer containing InClx phosphorus. Annealing at 230 � C induces desorption reveals P-rich (2 · surface. Subsequent annealing higher temperature In-rich 4) structural properties chemically prepared found to be similar those obtained decapping As/P-capped epitaxial layers. 2006 Elsevier B.V. All rights reserved.
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