Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
作者： O.E. Tereshchenko , E. Placidi , D. Paget , P. Chiaradia , A. Balzarotti
DOI: 10.1016/J.SUSC.2004.07.047
关键词: Scanning tunneling microscope 、 Spectral line 、 Indium arsenide 、 Annealing (metallurgy) 、 Surface finish 、 Anisotropy 、 Spectroscopy 、 Crystallography 、 Chemistry 、 Electron diffraction
摘要: Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (100) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 x 1) pattern is observed, which successively evolves to beta(2)(2 4)/c(2 8) (4 2)/c(8 2) ones after annealing 330degreesC 410degreesC respectively. At intermediate temperature 370degreesC, an alpha(2)(2 4)/(4 mixed reconstruction observed. Reflectance spectra are compared with those corresponding reconstructions observed As-decapping found be quite similar. Therefore we conclude that high-quality can obtained wet chemical treatment in easy, inexpensive practical way. (C) 2004 Elsevier B.V. All rights reserved.
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