Bulklike behavior of the optical anisotropy of cation-rich (001) surfaces of Ga 1-x In x As alloys
作者： V. L. Berkovits , D. Paget , A. V. Subashiev , O. E. Tereshchenko
DOI: 10.1103/PHYSREVB.69.033305
关键词:
摘要: Using reflectance anisotropy spectroscopy, we have studied cation-rich (001) surfaces of Ga 1 - x In As. All the spectra contain a dominant negative line, for which energy shifts between 1.8 eV InAs and 2.3 forGaAs. The dependence this on concentration is nonlinear perfectly interpreted using bowing parameter characteristic bulk transitions. present results, amplitude shift, fact that transition lies far away from critical points, propose final state optical penetrates deeply into bulk, whereas initial keeps more pronounced surface character.
harvard.edu
sci-hub.se 参考文章(25)
A. I. Shkrebtii, N. Esser, W. Richter, W. G. Schmidt, F. Bechstedt, B. O. Fimland, A. Kley, R. Del Sole, Reflectance Anisotropy of GaAs(100): Theory and Experiment Physical Review Letters. ,vol. 81, pp. 721- 724 ,(1998) , 10.1103/PHYSREVLETT.81.721
V. L. Berkovits, N. Witkowski, Y. Borensztein, D. Paget, Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations Physical Review B. ,vol. 63, pp. 121314- ,(2001) , 10.1103/PHYSREVB.63.121314
C. Goletti, F. Arciprete, S. Almaviva, P. Chiaradia, N. Esser, W. Richter, Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy Physical Review B. ,vol. 64, pp. 193301- ,(2001) , 10.1103/PHYSREVB.64.193301
D. Paget, C. Hogan, V. L. Berkovits, O. E. Tereshchenko, Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga 1-x In x As(001) Physical Review B. ,vol. 67, pp. 245313- ,(2003) , 10.1103/PHYSREVB.67.245313
L. F. Lastras-Martínez, D. Rönnow, P. V. Santos, M. Cardona, K. Eberl, Optical anisotropy of (001)-GaAs surface quantum wells Physical Review B. ,vol. 64, pp. 2453031- 2453038 ,(2001) , 10.1103/PHYSREVB.64.245303
C. Kumpf, D. Smilgies, E. Landemark, M. Nielsen, R. Feidenhans’l, O. Bunk, J. H. Zeysing, Y. Su, R. L. Johnson, L. Cao, J. Zegenhagen, B. O. Fimland, L. D. Marks, D. Ellis, Structure of metal-rich (001) surfaces of III-V compound semiconductors Physical Review B. ,vol. 64, pp. 075307- ,(2001) , 10.1103/PHYSREVB.64.075307
Pablo Aitor Postigo, Gaspar Armelles, Thomas Utzmeier, Fernando Briones, IN SITU OPTICAL SPECTROSCOPY OF GA DIMERS ON GAP, GAAS, AND GASB BY SURFACE CHEMICAL MODULATION Physical Review B. ,vol. 57, pp. 1359- 1361 ,(1998) , 10.1103/PHYSREVB.57.1359
W. G. Schmidt, F. Bechstedt, W. Lu, J. Bernholc, Interplay of surface reconstruction and surface electric fields in the optical anisotropy of GaAs(001) Physical Review B. ,vol. 66, pp. 085334- ,(2002) , 10.1103/PHYSREVB.66.085334
WG Schmidt, F Bechstedt, K Fleischer, C Cobet, N Esser, W Richter, J Bernholc, G Onida, None, GaAs(001): Surface Structure and Optical Properties Physica Status Solidi (a). ,vol. 188, pp. 1401- 1409 ,(2001) , 10.1002/1521-396X(200112)188:4<1401::AID-PSSA1401>3.0.CO;2-1
S. E. Acosta-Ortiz, A. Lastras-Martínez, Electro-optic effects in the optical anisotropies of (001) GaAs. Physical Review B. ,vol. 40, pp. 1426- 1429 ,(1989) , 10.1103/PHYSREVB.40.1426