Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
作者： O. E. Tereshchenko , S. I. Chikichev , A. S. Terekhov
DOI: 10.1116/1.581926
关键词: Low-energy electron diffraction 、 Annealing (metallurgy) 、 Epitaxy 、 Auger electron spectroscopy 、 Gallium 、 Materials science 、 Electron diffraction 、 Arsenic 、 Analytical chemistry 、 X-ray photoelectron spectroscopy
摘要: The GaAs(100) surfaces chemically treated in HCl-isopropanol solution and annealed vacuum were studied by means of Auger electron spectroscopy, x-ray photoelectron high-resolution energy-loss spectra, Low-energy diffraction (LEED). Chemical treatment sample transfer into ultrahigh performed under nitrogen atmosphere. removes gallium arsenic oxides from the surface, with about 2 monolayers excess being left on it. residual carbon contaminations around 0.2–0.4 ML consisted hydrocarbon molecules. These removed surface together annealing at 300–420 °C. With increased temperature, a sequence six reconstructions identified LEED: (1×1), (2×4)/c(2×8), (2×6), (3×6), (4×1) c(8×2) temperature intervals 250–400, 420–480, 480–500, 500–520, 520–560 560–600 °C, respectively. All irreversible. structural properties prepared found to be similar those obtained molecular-beam epitaxy-growth decapping As-capped epitaxial layers.
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sci-hub.se 参考文章(28)
Matthew Nooney, Vladimir Liberman, Mingde Xu, Audunn Ludviksson, Richard M. Martin, Reaction of HCl with the GaAs(100) surface Surface Science. ,vol. 302, pp. 192- 204 ,(1994) , 10.1016/0039-6028(94)91109-6
Y. Chen, J. Schmidt, L. Šiller, J. C. Barnard, R. E. Palmer, Weak adsorption of ethylene on GaAs(100) Physical Review B. ,vol. 58, pp. 1177- 1180 ,(1998) , 10.1103/PHYSREVB.58.1177
C. Deparis, J. Massies, Surface stoichiometry variation associated with GaAs (001) reconstruction transitions Journal of Crystal Growth. ,vol. 108, pp. 157- 172 ,(1991) , 10.1016/0022-0248(91)90364-B
Shinya Osakabe, Sadao Adachi, Study of GaAs(001) Surfaces Treated in Aqueous HCl Solutions Japanese Journal of Applied Physics. ,vol. 36, pp. 7119- 7125 ,(1997) , 10.1143/JJAP.36.7119
H. Gant, W. Mönch, Electron escape depths in germanium Surface Science Letters. ,vol. 105, pp. 217- 224 ,(1981) , 10.1016/0167-2584(81)90431-X
Z Song, S Shogen, M Kawasaki, I Suemune, X-ray photoelectron spectroscopy and atomic force microscopy surface study of GaAs(100) cleaning procedures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 77- 82 ,(1995) , 10.1116/1.587989
Ilya Chizhov, Geunseop Lee, Roy F. Willis, Dmitry Lubyshev, David L. Miller, Scanning tunneling microscopy study of the evolution of the GaAs(001) surface during the (2 × 4)−(4 × 2) phase transition Applied Surface Science. ,vol. 123, pp. 192- 198 ,(1998) , 10.1016/S0169-4332(97)00434-0
A. Saliètes, J. Massies, J.P. Contour, Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates Japanese Journal of Applied Physics. ,vol. 25, pp. L48- L51 ,(1986) , 10.1143/JJAP.25.L48
S. Matsumoto, S. Yamaga, A. Yoshikawa, New surface passivation method for GaAs and its effect on the initial growth stage of a heteroepitaxial ZnSe layer Applied Surface Science. pp. 274- 280 ,(1992) , 10.1016/0169-4332(92)90429-2
Hideki Yao, Shueh‐Lin Yau, Kingo Itaya, In situ scanning tunneling microscopy of GaAs(001), (111)A, and (111)B surfaces in sulfuric acid solution Applied Physics Letters. ,vol. 68, pp. 1473- 1475 ,(1996) , 10.1063/1.116258