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Design, fabrication and characterization of metal-semiconductor solar cells
作者: Elio Tirrito
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参考文章
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Chemical and electrical characterization of Gd2O3∕GaAs interface improved by sulfur passivation
Journal of Applied Physics.
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P. Sheldon, R. E. Hayes, P. E. Russell, R. N. Nottenburg, K. A. Emery, P. J. Ireland, L. L. Kazmerski,
Evaluation of ITO/GaAs solar cells
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Deposition by magnetron sputtering and characterization of indium tin oxide thin films
Thin Solid Films.
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V. G. Bozhkov, N. A. Torkhov, I. V. Ivonin, V. A. Novikov,
Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy
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O. E. Tereshchenko, S. I. Chikichev, A. S. Terekhov,
Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
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Antonio Luque, Antonio MartÃ,
The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
Advanced Materials.
,vol. 22, pp. 160- 174 ,(2010) ,
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9.
William Shockley, Hans J. Queisser,
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
Journal of Applied Physics.
,vol. 32, pp. 510- 519 ,(1961) ,
10.1063/1.1736034
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S. Arabasz, E. Bergignat, G. Hollinger, J. Szuber,
XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH4)2Sx solution
Applied Surface Science.
,vol. 252, pp. 7659- 7663 ,(2006) ,
10.1016/J.APSUSC.2006.03.061
来源期刊
Universitat Politècnica de Catalunya
2011 年,
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