Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix
作者： J. A. García , R. Plugaru , B. Méndez , J. Piqueras , T. J. Tate
关键词: Infrared 、 Nanocrystalline silicon 、 Spectral line 、 Analytical chemistry 、 Cathodoluminescence 、 Photoluminescence 、 Luminescence 、 Chemistry 、 Scanning electron microscope 、 Silicon
摘要: The luminescence of amorphous silicon layers either implanted with Er or co-implanted and O has been studied by photoluminescence (PL) cathodoluminescence (CL) in the scanning electron microscope. Annealing nitrogen causes formation oxide species Er-Si complexes precipitates as well a spectral changes visible infrared ranges. main CL emission takes place range while PL spectra reveal intense emission. show blue-violet, green, bands whose relative intensities depend on post-implantation annealing temperature. blue-violet band series lines violet region related to phonon assisted transitions different 1200-1500 nm. influence annealing-induced structural observed is discussed.
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