Structural and chemical analysis of a model Si–SiO2 interface using spatially resolved electron-energy-loss spectroscopy

摘要: This work reports an experimental electron-energy-loss spectroscopy study carried out on a model thermal Si–SiO2 interface. Valence-loss spectra and core-loss (Si L2,3 O K edges) were recorded across the interface in line-spectrum mode with high spatial resolution field emission gun scanning transmission electron microscope. From analysis of line basis high-resolution microscopy high-angle annular dark-field experiments, it is concluded that not sharp but extends over about three atomic planes consisting Si atoms arranged structure evolving between crystalline SiO SiO2 before growing as amorphous layer. In addition, from valence-loss terms energy-loss function or dielectric e, we show valence-electron-energy-loss could be relevant alternative method for determining properties, example bandgap, constan...