Influence of barrier material on spin splitting due to inversion asymmetry in heterostructures
作者： P. Pfeffer
关键词: Electron density 、 Magnetic field 、 Electric field 、 Heterojunction 、 Rashba effect 、 Condensed matter physics 、 Spin polarization 、 Energy level splitting 、 Zero field splitting 、 Materials science
摘要: Influence of barrier material on the spin splitting conduction subbands in heterostructures because structure inversion asymmetry (Bychkov–Rashba splitting) is studied. The at a vanishing magnetic field calculated for two heterostructures: InAs/SiO2 and InAs/In0.8Al0.2As, having same well InAs but very different materials. It demonstrated that strongly influences ground subband InAs. splittings both are computed as functions electron density, we obtain almost twice larger than InAs/In0.8Al0.2As. influence spin-dependent part boundary conditions studied it shown considered changes up to 25% its value. emphasized Bychkov–Rashba not proportional average electric heterostructure.
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sci-hub.se 参考文章(11)
Louis C. Green, Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology American Journal of Physics. ,vol. 35, pp. 291- 292 ,(1967) , 10.1119/1.1974060
B. Wakefield, M. A. G. Halliwell, T. Kerr, D. A. Andrews, G. J. Davies, D. R. Wood, Direct energy gap of Al1−xInxAs lattice matched to InP Applied Physics Letters. ,vol. 44, pp. 341- 343 ,(1984) , 10.1063/1.94726
T. Matsuyama, R. Kürsten, C. Meißner, U. Merkt, Rashba spin splitting in inversion layers onp-type bulk InAs Physical Review B. ,vol. 61, pp. 15588- 15591 ,(2000) , 10.1103/PHYSREVB.61.15588
Supriyo Datta, Biswajit Das, Electronic analog of the electro‐optic modulator Applied Physics Letters. ,vol. 56, pp. 665- 667 ,(1990) , 10.1063/1.102730
P. Pfeffer, Effect of inversion asymmetry on the conduction subbands in G a A s − G a 1 − x Al x As heterostructures Physical Review B. ,vol. 59, pp. 15902- 15909 ,(1999) , 10.1103/PHYSREVB.59.15902
L. Wissinger, U. Rössler, R. Winkler, B. Jusserand, D. Richards, Spin-splitting in the electron subband of asymmetric GaAs/AlGaAs quantum wells: the multiband envelope function approach Physical Review B. ,vol. 58, pp. 15375- 15377 ,(1998) , 10.1103/PHYSREVB.58.15375
Sandip Tiwari, David J. Frank, Empirical fit to band discontinuities and barrier heights in III–V alloy systems Applied Physics Letters. ,vol. 60, pp. 630- 632 ,(1992) , 10.1063/1.106575
W. Zawadzki, P. Pfeffer, Average forces in bound and resonant quantum states Physical Review B. ,vol. 64, pp. 235313- ,(2001) , 10.1103/PHYSREVB.64.235313
Th. Schäpers, G. Engels, J. Lange, Th. Klocke, M. Hollfelder, H. Lüth, Effect of the heterointerface on the spin splitting in modulation doped InxGa1−xAs/InP quantum wells for B→0 Journal of Applied Physics. ,vol. 83, pp. 4324- 4333 ,(1998) , 10.1063/1.367192
Fusayoshi J. Ohkawa, Yasutada Uemura, Quantized Surface States of a Narrow-Gap Semiconductor Journal of the Physical Society of Japan. ,vol. 37, pp. 1325- 1333 ,(1974) , 10.1143/JPSJ.37.1325