Quantized Surface States of a Narrow-Gap Semiconductor

摘要: Quantized surface states in an inversion later of narrow-gap semiconductor with the zinc-blend structure are investigated theoretically by effective mass approximation for nearly degenerate bands. When band gap is small, and spin-orbit interaction large, asymmetry potentioal causes large k -linear term two dimensional dispersion relation, which removes spin degeneracy. Also, g -factor becomes so that reversal ordering Landau levels expected. The theory applied to analysis Schubnikov-de Haas measurements Hg 0.79 Cd 0.21 ( e G =68 meV, m 0 * =0.006 m). splitting degeneracy as several order expected be observed. sample expressed parametrized form, values parameters estimated using experimental data.