Gate-tunable p-n heterojunction diode, and fabrication method and application of same
作者： Mark C. Hersam , Vinod K. Sangwan , Deep M. Jariwala
DOI:
关键词: Semiconductor 、 Electrode 、 Fabrication 、 Heterojunction bipolar transistor 、 Materials science 、 Heterojunction 、 Optoelectronics 、 Resistor 、 Carbon nanotube 、 Diode
摘要: One aspect of the invention relates to a gate-tunable p-n heterojunction diode including vertical stacked two ultrathin semiconductors. In one embodiment, single-layer molybdenum disulphide an n-type semiconductor are below semiconducting single-walled carbon nanotubes p-type with each them connected gold electrodes form heterojunction. The electrical properties can be modulated by gate voltage applied electrode and range from insulator linear-response resistor highly rectifying diode. tunability also allows spectral control over photoresponse.
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