Integrated Circuits Based on Bilayer MoS2 Transistors

摘要: Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it overcome the shortcomings zero-bandgap graphene, while still sharing many graphene’s advantages for electronic optoelectronic applications. Discrete components, field-effect transistors, sensors, photodetectors made from few-layer show promising performance potential substitute Si in conventional electronics organic amorphous semiconductors ubiquitous systems display An important next step is fabrication fully integrated multistage circuits logic building blocks on demonstrate its capability complex digital high-frequency ac This paper demonstrates an inverter, a NAND gate, static random access memory, five-stage ring oscillator based direct-coupled transistor logic...