Two-dimensional materials for low power and high frequency devices

摘要: In this paper, we present an overview of the current state-of-the-art in two-dimensional materials beyond graphene, and summarize device performance reported to-date. There is promise for these layered to be foundation a new area low power high frequency electronics, with early reports indicating 10s gigahertz (GHz) operation without significant optimization parasitic resistances or capacitances. addition, discuss synthesis transition metal dichalcogenides integration as-grown material into heterostructures electronic devices. Finally, impact surface preparation on dielectrics MoS2 required achieve GHz performance.