N-well resistor as a ballast resistor for output MOSFET
作者： Chun Jiang
DOI:
关键词: Resistor 、 Transistor 、 Doping 、 MOSFET 、 Substrate (electronics) 、 Second source 、 Materials science 、 Field-effect transistor 、 Electrical engineering 、 Conductivity 、 Optoelectronics
摘要: A resistor formed in a well adjacent to transistor serves as ballast for the transistor. The is first region on substrate. of conductivity type. second type region. gate over portion Concurrently, covering area well. and are comprised same material. Source/drain regions either side source/drain extends into Concurrent forming source drain regions, doped within have doping density. physically separated from by Contact
lens.org 参考文章(8)
Ko-Min Chang, Danny Pak-Chum Shum, Kuo-Tung Chang, Method for making an EEPROM cell with isolation transistor ,(1995)
Hamza Yilmaz, Fwu-Iuan Hshieh, Method for making termination structure for power MOSFET ,(1995)
C.H. Diaz, T.E. Kopley, P.J. Marcoux, Building-in ESD/EOS reliability for sub-halfmicron CMOS processes international reliability physics symposium. pp. 276- 283 ,(1995) , 10.1109/RELPHY.1995.513692
A. Amerasekera, L. van Roozendaal, J. Bruines, F. Kuper, Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parameters IEEE Transactions on Electron Devices. ,vol. 38, pp. 2161- 2168 ,(1991) , 10.1109/16.83744
Hisashi Shichijo, Clarence W. Teng, Ih-Chin Chen, Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein ,(1994)
Junji Hirase, Shin Hashimoto, Method of manufacturing a semiconductor device having a dummy cell ,(1995)
Addison B. Jones, Rajiv Gupta, Eugene R. Worley, ESD protection for submicron CMOS circuits ,(1994)
Haksong Park, Chaimin Lee, Heonjoon Kim, Kwanyong Sung, Bidirectional input-output cell ,(1988)