LDD structure for ESD protection and method of fabrication

摘要: An ESD protection device including a transistor structure with resistive regions located within active areas thereof. The is formed of one or more MOS transistors, preferably N-type transistors. drain the transistors are modified to reduce conductivity those by preventing high carrier concentration implants in sections regions. This achieved modifying an N LDD mask and steps related thereto, as well silicide exclusion thereto. modifications result omission dopant from area immediately adjacent underlying channel. In addition, portions spacer oxide remain over region be formed. Subsequent implant siliciding effectively blocked that remains, leaving low-density (LDD) charge regions, except where omitted. resistivity greater than region. uniform turn-on fingers set without need add valuable layout space increased processing steps.