Process for fabricating a MOS device having protection against electrostatic discharge
作者： Mario M. A. Pelella
DOI:
关键词: Metal gate 、 Process (computing) 、 Materials science 、 Diode 、 Electrostatic discharge 、 Optoelectronics
摘要: A MOS device having protection against electrostatic discharge includes a diode formed below the so that excess charge buildup in is conducted away from by diode.
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