Multi-pin dc glow discharge PECVD for uniform growth of vertically oriented graphene at atmospheric pressure

摘要: Atmospheric normal glow discharge plasma-enhanced chemical vapor deposition (ANGD-PECVD) holds great potential for the industrial in-line continuous growth of vertically oriented graphene (VG) nanosheets. However, conventional single-pin-to-plate electrode arrangement owns drawback producing a non-uniform electric field, subsequently leading to fairly poor uniformity as-grown VG This work offers proof concept on novel multi-pin ANGD-PECVD method uniform Based numerical calculation, dual-pin ANGD can provide more field compared with single-pin counterpart, due compensation from adjacent pins and lower integrated curvature electrode. Experimental results demonstrate that four-pin is able significantly improve localized current density at substrate, further realize nanosheets excellent homogeneity in terms morphology structure. Successful application working as active materials supercapacitor illustrated end this work.