Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be.
作者： J.-H. Chung , S. J. Chung , Sanghoon Lee , B. J. Kirby , J. A. Borchers
DOI: 10.1103/PHYSREVLETT.101.237202
关键词: Neutron 、 Saturation (magnetic) 、 Condensed matter physics 、 Magnetic semiconductor 、 Doping 、 Ferromagnetism 、 Materials science 、 Antiferromagnetism 、 Neutron reflectometry 、 Charge carrier
摘要: We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at wave vector corresponding to twice multilayer period, indicating that is AFM. When applied field increased above saturation field, this AFM suppressed. This behavior not observed when spacers are undoped, suggesting mediated doped charge carriers.
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