Low-threshold electrically pumped ultraviolet laser diode
作者： Hai Zhu , Chong-Xin Shan , Bing-Hui Li , Z. Z. Zhang , De-Zhen Shen
DOI: 10.1039/C0JM04233A
关键词: Ultraviolet 、 Optoelectronics 、 Materials science 、 Lasing threshold 、 Order of magnitude 、 Optics 、 Laser diode 、 Gain-switching
摘要: Electrically pumped ultraviolet lasing has been realized in a Au/MgO/MgZnO/n-ZnO structure. The is located at around 330 nm. Notably the threshold of about 30.0 mA, over one order magnitude smaller than corresponding values reported before.
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