作者: HY Yang , Siu Fung Yu , Shu Ping Lau , SH Tsang , GZ Xing
DOI: 10.1063/1.3157842
关键词: Nanowire 、 Ultraviolet 、 Lasing threshold 、 Stimulated emission 、 Semiconductor optical gain 、 Materials science 、 Wide-bandgap semiconductor 、 Gain-switching 、 Optoelectronics 、 Semiconductor laser theory
摘要: Although nanostructured SnO2 exhibited ultraviolet stimulated emission at room temperature, the low intensities and occurrence of gain saturation restricted them to be considered as luminescent materials for semiconductor lasers. In this letter, we find that a large excitonic can obtained from nanowires coated with an amorphous layer. Under effective pumping, coherent random lasing realized randomly assembled temperature.