Process for forming refractory metal silicide layers in an integrated circuit
作者： Carter W. Kaanta , Thomas J. Hartswick , Terrance M. Wright , Pei-Ing P. Lee
DOI:
关键词: Refractory metals 、 Composite material 、 Metallurgy 、 Materials science 、 Substrate (electronics) 、 Silicon dioxide 、 Titanium nitride 、 Silicide 、 Silicon 、 Titanium 、 Layer (electronics)
摘要: A method for forming reactive metal silicide layers at two spaced locations on a silicon substrate, which can be of different thicknesses and/or is provided. substrate (10) has dioxide layer (14) formed thereon followed by the formation polysilicon (16) (14), refractory (18), e.g. titanium (16). non-reflecting material (20), nitride (18). Conventional photoresist techniques are used to pattern (18) and (16), reacted with contacted form (24). The portion overlying then removed exposed ion implanted source/drain regions (27). second (28), either or some other metal, deposited over region (27), first (24) removing (20). (28) (27) (30), after unreacted removed.
lens.org 参考文章(3)
Fu-Tai Liou, Che-Chia Wei, Local interconnect for integrated circuits ,(1992)
Robert O. Miller, Fu-Tai Liou, Process for making refractory metal silicide cap for protecting multi-layer polycide structure ,(1989)
Annie Baudrant, Michel Marty, Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation ,(1984)