Intermediate layer lithography
作者： Jeffrey Alan McKee
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摘要: An isotropic or partially etch shrinks lithographically patterned photoresist (211, 212) to yield reduced linewidth (213, 214) with a buried antireflective coating also acting as an etchstop sacrificial layer. The pattern provide mask for subsequent anisotropic etching of underlying material such polysilicon (206) metal insulator ferroelectric.
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