Estimates of Stark broadening of some Si(II) lines
作者： John D. Hey
DOI: 10.1016/0022-4073(77)90075-9
关键词: Spectral line 、 Physics 、 Computational physics 、 Quantum mechanics 、 Computation 、 Work (thermodynamics) 、 Stark effect 、 Silicon
摘要: Abstract Recent measurements of spectral line widths for the first five multiplets in visible singly-ionized silicon, are compared with corresponding values predicted by semi-empirical method Griem, as well two other Stark broadening theories. Although there is considerable disagreement between different measurements, and theories involved, agreement to better than 30% on average obtained these calculations computations Sahal-Brechot. Some experimental theoretical questions involved discussed suggestions made future work subject.
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