Fundamentals of NVM Physics and Computing

作者: Hao Yu , Yuhao Wang , Hao Yu , Yuhao Wang

DOI: 10.1007/978-1-4939-0551-5_2

关键词: Conventional memoryMagnetoresistive random-access memoryElectrical engineeringMemristorMagnetization dynamicsComputational scienceIn-Memory ProcessingRacetrack memoryBistabilityProgrammable metallization cellPhysics

摘要: The bistable states are the foundation of all memory devices to store data. For conventional devices, represented by voltage levels and transition is described charging discharging capacitors. dynamics critical in order obtain important figures merit such as device operation speed energy. Therefore, it great importance quantitatively understand physical mechanism emerging nonvolatile whose nonelectrical variables. magnetoresistive random-access family, including toggled MRAM, STT-MRAM, racetrack memory, magnetization fundamental physics behind, while for resistive category, memristor CBRAM, ion migration effect shared physics. In this chapter, both introduced.

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