作者: Hao Yu , Yuhao Wang , Hao Yu , Yuhao Wang
DOI: 10.1007/978-1-4939-0551-5_2
关键词: Conventional memory 、 Magnetoresistive random-access memory 、 Electrical engineering 、 Memristor 、 Magnetization dynamics 、 Computational science 、 In-Memory Processing 、 Racetrack memory 、 Bistability 、 Programmable metallization cell 、 Physics
摘要: The bistable states are the foundation of all memory devices to store data. For conventional devices, represented by voltage levels and transition is described charging discharging capacitors. dynamics critical in order obtain important figures merit such as device operation speed energy. Therefore, it great importance quantitatively understand physical mechanism emerging nonvolatile whose nonelectrical variables. magnetoresistive random-access family, including toggled MRAM, STT-MRAM, racetrack memory, magnetization fundamental physics behind, while for resistive category, memristor CBRAM, ion migration effect shared physics. In this chapter, both introduced.