Wideband Dual-Gate GaN HEMT Low Noise Amplifier for Front-End Receiver Electronics
作者： Michael V. Aust , Arvind K. Sharma , Yao-chung Chen , Michael Wojtowicz
DOI: 10.1109/CSICS.2006.319921
关键词: Amplifier 、 Noise figure 、 Y-factor 、 Electrical engineering 、 Optoelectronics 、 Direct-coupled amplifier 、 Low-noise amplifier 、 Noise (electronics) 、 Instrumentation amplifier 、 Materials science 、 Noise temperature
摘要: A highly survivable wideband low noise amplifier (LNA) for front-end receiver electronics is presented utilizing 0.2 mum AlGaN/GaN HEMT process on SiC substrate. This novel utilizes dual-gate devices with current feedback and drain bias network to attain performance in terms of lower higher gain. Nominal operation at 125 mA/mm a voltage 10 volts provided 12.5 18 dB gain 1.3 2.5 figure. Due high breakdown voltage, the capable better than 25 dBm output power can withstand an input level approaching 38 dBm. paper will also document comparison similar circuit using 0.15 pseudomorphic InGaAs/AlGaAs/GaAs demonstrate outstanding survivability amplifiers
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