GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

摘要: Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for power microwave applications due to its material properties including saturation velocity and breakdown field together with excellent thermal conductivity robustness. It is also a promising candidate receiver front-ends in radio base station(RBS) where low noise figure linearity are key issues noise amplifier (LNA) design. The objective this work study GaN HEMT LNAs terms performance, within frequency band 1-3 GHz, station front-end design. A well-designed GaN HEMT LNA would eventually challenge existing RBS commercial LNA platforms such gallium arsenide (GaAs) pseudomorphic (pHEMT). In first part characterization design highly linear single-stage common-source MMIC operational 3 GHz presented. The main target was investigate trade-off between parameters output third order intercept point (OIP3), noise figure (NF) dc consumption (Pdc). At LNA showed measured OIP3 39 dBm Pdc = 2.1 W. minimum NF 1.5 dB which around 1 higher than commercial GaAs pHEMTs. The second deals two hybrid solutions, two-stage commonsource cascade operating frequencies single-stage cascode designed GHz. Both designs were based on available commercial HEMTs. obtain NF (≤ dB) and high (≥ 40 dBm) maximum 2 The fabricated produced an 42 with a equal 0.5 dB. be 1.2 W. With OIP3/Pdc ratio 13.2 may present GaAs pHEMT solutions RBS. The cascode exhibited minimum 0.6 Compared topology 35 but at 50% less Pdc. Keywords: receiver, (HEMT), (GaN), amplifier, cascode, cascade, linearity, noise, robustness.