Accurate small-signal modeling of HFET's for millimeter-wave applications
作者： N. Rorsman , M. Garcia , C. Karlsson , H. Zirath
DOI: 10.1109/22.486152
关键词: Equivalent series resistance 、 Computational physics 、 Extremely high frequency 、 Iterative method 、 Schottky diode 、 Electronic engineering 、 Transistor 、 Transmission line 、 Engineering 、 Heterojunction 、 Equivalent circuit
摘要: In this paper we discuss the small-signal modeling of HFET's at millimeter-wave frequencies. A new and iterative method is used to extract parasitic components. This allows calculation a /spl pi/-network model heterojunction field-effect transistor (HFET) pads, thus extending validity higher Formulas are derived translate into transmission line. general cold (FET) equivalent circuit, including Schottky series resistance, resistances inductances. Finally, compact set analytical equations for intrinsic parameters presented. The real part Y/sub 12/ accounted in these its discussed. accounting Re(Y/sub 12/) improves S-parameter modeling. Model extracted an InAlAs/InGaAs/InP HFET from measured S-parameters up 50 GHz, evaluated by comparison with data 75-110 GHz.
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