High-frequency limits of millimeter-wave transistors

作者: M.B. Steer , R.J. Trew

DOI: 10.1109/EDL.1986.26503

关键词:

摘要: Estimates of transistor performance at millimeter-wave frequencies are generally based on extrapolation microwave gain measurements a roll-off 6 dB per frequency octave. In this paper we show that complex-conjugate pole pair leads to 12-dB/octave in the region. As result actual f_{\max} transistors can be considerably less than determined using measurements.

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