An In 0.52 Al 0.48 As/n + -In 0.53 Ga 0.47 As MISFET with a heavily doped channel
作者： J.A. del Alamo , T. Mizutani
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摘要: An In 0.52 Al 0.48 As/n+-In 0.53 Ga 0.47 As MIS-type field-effect transistor (FET) with a channel doped at 7 × 1017cm-3level has been fabricated on an InP substrate. A device 2-µm length yielded maximum transconductance of 152 mS/mm, f_{T} = 12.4 GHz, and f_{\max} 50 GHz. At 10 the available gain is 17.4 dB. The performance this shows that heavily FET's are very promising for high-frequency operation.
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