Modeling of Gunn domain effects in the output conductance of the high-frequency small-signal GaAs MESFET equivalent circuit
作者： Mark A. Magerko , Kai Chang
关键词: Electrical resistivity and conductivity 、 Optoelectronics 、 Conductance 、 Signal 、 Equivalent circuit 、 Electrical engineering 、 Field-effect transistor 、 Gunn diode 、 Physics 、 Schottky diode 、 MESFET
摘要: A time-delay element associated with the output conductance has been included in small-signal GaAs MESFET equivalent circuit to model Gunn domain effects. From experimental data collected 36 GHz, these effects primarily contribute decrease of (gds) increasing frequency which significantly affects magnitude S-parameter S22. © 1992 John Wiley & Sons, Inc.
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