Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs

摘要: Internal photoemission and X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the effect of sulfur passivation on GaAs surface degradation exposed air ambient after passivation. The reverse bias dependence Schottky barrier height was very small in as-sulfur-treated sample mainly explained by image force lowering effect. However, it increased as this air, indicating an increase interface state density. XPS studies showed that both Ga As oxides hardly observed sulfur-passivated samples. This indicates strongly suppresses oxidation GaAs. a amount elemental arsenic with trace suboxides (such AsO) exposure time increased. These results probably correlated samples Thermal found be retarded until about 10 min at 300°C. A possible model suppression also discussed.