Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy
作者： I. K. Han , E. K. Kim , J. I. Lee , S. H. Kim , K. N. Kang
DOI: 10.1063/1.365263
关键词:
摘要: The degradation behavior of the sulfur-treated InP surface at relatively low temperature has been investigated with x-ray photoelectron and photoluminescence (PL) spectroscopy. results showed that treated surfaces were oxidized to In2O3, InPO3, InPO4 250 °C in a vacuum 10−3 Torr for 20 min. As holding time S-treated under increased, PL peak caused by band edge transition decreased without formation oxides. It was therefore suggested decrease intensity is only related generation phosphorous vacancies surface, not oxide formation. usefulness thin S overlayer on III–V semiconductors also discussed.
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