A mild electrochemical sulfur passivation method for GaAs(100) surfaces
作者： Z. S. Li , X. Y. Hou , W. Z. Cai , W. Wang , X. M. Ding
DOI: 10.1063/1.360074
关键词:
摘要: We have developed a mild electrochemical sulfurization technique which can form very thick sulfide layer on GaAs(100) surface. This is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows large intensity enhancement as compared with that as‐etched samples. No visual decay occurs under the laser beam illumination after sample has been maintained air for more than seven months. structure and composition passivation layers are investigated by x‐ray photoelectron spectroscopy mechanism formation discussed.
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