Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors
作者： Pranab K Mohapatra , Kamalakannan Ranganathan , Lital Dezanashvili , Lothar Houben , Ariel Ismach
DOI: 10.1016/J.APMT.2020.100734
关键词: Epitaxy 、 High-resolution transmission electron microscopy 、 Heterojunction 、 Optoelectronics 、 Monolayer 、 Crystal 、 Chemical vapor deposition 、 Selected area diffraction 、 van der Waals force 、 Materials science
摘要: … Symmetric source and drain contacts were patterned using standard electron beam lithography, while the heavily doped Si substrate underneath the SiO 2 layer, was used as the gate …
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