作者: Joan K. Bosworth , Charles T. Black , Christopher K. Ober
DOI: 10.1021/NN900343U
关键词: Photoresist 、 Thin film 、 Copolymer 、 Polymer 、 Self-assembly 、 Wafer 、 Phase (matter) 、 Chemical engineering 、 Ultraviolet light 、 Materials science 、 Polymer chemistry
摘要: We leverage distinctive chemical properties of the diblock copolymer poly(α-methylstyrene)-block-poly(4-hydroxystyrene) to create for first time high-resolution selective-area regions two different block phase morphologies. Exposure thin films nonselective or block-selective solvent vapors results in polymer separation and self-assembly patterns cylindrical-phase kinetically trapped spherical-phases, respectively. Poly(4-hydroxystyrene) acts as a negative-tone photoresist presence small amounts photoacid generator cross-linker, undergoing radiation-induced cross-linking upon exposure ultraviolet light an electron beam. use lithographic lock one self-assembled morphology specific sample areas 100 nm width prior film subsequent vapor form second unexposed wafer areas.