作者: Mariko Ohtsuka , Toshiaki Takahira , Kazumasa Yanagisawa , Yuji Tanaka , Yoshihiko Yasu
DOI:
关键词: Electronic engineering 、 Electric power 、 Dram 、 Low voltage 、 Electronic circuit 、 CMOS 、 Standby power 、 Dynamic random-access memory 、 Engineering 、 Integrated circuit
摘要: A DRAM module is applied to the system LSI which provided with a standby mode for suppressing whole operation thereof and an permits at least operate but suppresses of other circuits. The above-mentioned modes as well substrate bias control technology are CMOS that operates on low voltage. controlled hold or not data, enabling memory large capacity be mounted consuming sufficiently decreased amount electric power.