Semiconductor integrated circuit device having an improved operation control for a dynamic memory

作者: Mariko Ohtsuka , Toshiaki Takahira , Kazumasa Yanagisawa , Yuji Tanaka , Yoshihiko Yasu

DOI:

关键词: Electronic engineeringElectric powerDramLow voltageElectronic circuitCMOSStandby powerDynamic random-access memoryEngineeringIntegrated circuit

摘要: A DRAM module is applied to the system LSI which provided with a standby mode for suppressing whole operation thereof and an permits at least operate but suppresses of other circuits. The above-mentioned modes as well substrate bias control technology are CMOS that operates on low voltage. controlled hold or not data, enabling memory large capacity be mounted consuming sufficiently decreased amount electric power.

参考文章(4)
Alain Vallauri, Frederic Boutaud, Mansoor A. Chishtie, Ajay Padgaonkar, Yves Masse, Jason Jones, Marc Couvrat, System having registers for receiving data, registers for transmitting data, both at a different clock rate, and control circuitry for shifting the different clock rates ,(1995)
Yoshinobu Nakagome, Takahiro Nagano, Hiroyuki Mizuno, Semiconductor integrated circuit device and microcomputer ,(2001)
Koichiro Okumura, Susumu Kurosawa, 孝一郎 奥村, 晋 黒澤, Silicon-on-insulator semiconductor device and a bias voltage generating circuit ,(1995)