Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure
作者： L. W. Teo , W. K. Choi , W. K. Chim , V. Ho , C. M. Moey
DOI: 10.1063/1.1519355
关键词: Electron 、 Germanium 、 Semiconductor device 、 Computer data storage 、 Optoelectronics 、 Nanocrystal 、 Insulator (electricity) 、 Solid-state physics 、 Transmission electron microscopy 、 Nanotechnology 、 Materials science
摘要: The size of germanium (Ge) nanocrystals in a trilayer metal-insulator-semiconductor memory device was controlled by varying the thickness middle (co-sputtered Ge+SiO2) layer. From analyses using transmission electron microscopy and capacitance–voltage measurements, we deduced that both electrons holes are most likely stored within layer structure rather than at interfaces with oxide matrix.
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