Prospects of near-field plasmonic absorption enhancement in semiconductor materials using embedded Ag nanoparticles.

摘要: Metal nanoparticles are efficient antennas for light. If embedded in a semiconductor material, they can enhance light absorption the semiconductor, due to strong plasmonic near-field coupling. We use numerical simulations calculate enhancement using Ag with diameters range 5-60 nm crystalline Si, amorphous polymer blend, and Fe2O3. study single particles 100×100×100 volume, as well periodic arrays 100 pitch. find that all cases Ohmic dissipation metal is major factor. In while cause 5-fold of absorbance weakly absorbing near-bandgap spectral range, losses dominate absorption. conclude Si cannot be sensitized practical way. Similar results found The blend enhanced by up 100% nanoparticles, at expense additional losses. Amorphous mismatch between plasmon resonance bandgap a-Si. By sensitization thickness some materials reduced keeping same absorbance, which has benefits short carrier diffusion lengths. Scattering mechanisms beneficial trapping solar cells not considered this paper.