作者: Eric Chevalier , Philippe Guittienne
DOI:
关键词: Electrical engineering 、 Radio frequency 、 Dense plasma focus 、 Inductively coupled plasma 、 Capacitively coupled plasma 、 Optoelectronics 、 Plasma etching 、 Plasma actuator 、 Plasma etcher 、 Plasma 、 Materials science
摘要: The high density RF plasma source of this invention uses a special antenna configuration to launch waves at frequency such as 13,56MHz. comprises several conductive loops around common axis and spaced from each other along the axis. are electrically connected by axial segments, loop includes plurality serially capacitive elements. tunability allows adapt actively coupling energy (10) into an evolutive found in processings semiconductor manufacturing. This can be used for following applications : etching, deposition, sputtering systems, space propulsion, - based sterilization , abatement systems. In another embodiment, is conjunction with one or process chambers which comprise array magnets (14) coils too (15, 16). These elements used, on hand, confinement active control (Plasma rotation ) thanks feedback approach situ NMR Monitoring analysis moisture.