Plasma processing apparatus having parallel resonance antenna for very high frequency

摘要: Disclosed is a plasma process apparatus in which semiconductor device manufacturing using performed. The includes: vacuum chamber performed; very high frequency (VHF) power source for generating VHF power; parallel resonance antenna having plurality of coils connected to each other, and multiple variable capacitors insertion-installed series the coils, being installed at an outer upper portion chamber, supplied with from source; impedance matching box between antenna. Preferably, capacitor coaxial including: first insulator tube; two metal tubes respectively extending both ends second tube surrounding tube, partially placed adjacent sides thereof; so as glide along side surface tube.