Imaging Nanoscale Inhomogeneities and Edge Delamination in As‐Grown MoS2 Using Tip‐Enhanced Photoluminescence

摘要: Methods for nanoscale material characterization are in ever-increasing demand, especially those that can provide a broader range of information at once. Near-field techniques based on combinations scanning probe microscopy (SPM) and Raman or photoluminescence (PL) spectroscopy (tip-enhanced [TERS] and/or tip-enhanced [TEPL]) are, thanks to their capabilities fast development, strong candidates becoming widespread across the scientific community as SPM did only decade two ago. Herein, gap-less TEPL study is performed directly as-grown MoS2 monolayer samples without any pretreatment transfer, i.e., utilization plasmonic substrate. Thanks mapping resolution low few tens nanometers, homogeneous layer interiors from defective edge fronts grown monolayers be distinguished. With aid additional high-resolution modes, like local surface potential capacitance measurements, together with nanomechanical mapping, combination defects lack substrate doping suggested being responsible observed PL behavior partially delaminated layers. In contrast, mechanically exfoliated flakes show topography- contamination-related heterogeneities whole flake area.