Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors
作者： Matin Amani , Matthew L. Chin , Alexander L. Mazzoni , Robert A. Burke , Sina Najmaei
DOI: 10.1063/1.4873680
关键词: Electron mobility 、 Nanotechnology 、 Molybdenum disulfide 、 Materials science 、 Graphene 、 Chemical vapor deposition 、 Chemical engineering 、 Substrate (electronics) 、 Thin-film transistor 、 Electrical measurements 、 Monolayer
摘要: We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS 2 ) field-effect transistors (FETs) on Si/SiO 2 …
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Kristen Kaasbjerg, Kristian S Thygesen, Karsten W Jacobsen, None, Phonon-limited mobility in n -type single-layer MoS 2 from first principles Physical Review B. ,vol. 85, pp. 115317- ,(2012) , 10.1103/PHYSREVB.85.115317
Wenzhong Bao, Xinghan Cai, Dohun Kim, Karthik Sridhara, Michael S. Fuhrer, High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects Applied Physics Letters. ,vol. 102, pp. 042104- ,(2013) , 10.1063/1.4789365
Giovanni A. Salvatore, Niko Münzenrieder, Clément Barraud, Luisa Petti, Christoph Zysset, Lars Büthe, Klaus Ensslin, Gerhard Tröster, Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate. ACS Nano. ,vol. 7, pp. 8809- 8815 ,(2013) , 10.1021/NN403248Y
Han Wang, Lili Yu, Yi-Hsien Lee, Yumeng Shi, Allen Hsu, Matthew L. Chin, Lain-Jong Li, Madan Dubey, Jing Kong, Tomas Palacios, Integrated Circuits Based on Bilayer MoS2 Transistors Nano Letters. ,vol. 12, pp. 4674- 4680 ,(2012) , 10.1021/NL302015V
Isaac Childres, Jifa Tian, Luis A. Jauregui, Yong P. Chen, Igor Jovanovic, Michael Foxe, Michael Foxe, Romaneh Jalilian, Effect of electron-beam irradiation on graphene field effect devices Applied Physics Letters. ,vol. 97, pp. 173109- ,(2010) , 10.1063/1.3502610
Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller, High Performance Multilayer MoS2 Transistors with Scandium Contacts Nano Letters. ,vol. 13, pp. 100- 105 ,(2013) , 10.1021/NL303583V
Jason S Ross, Sanfeng Wu, Hongyi Yu, Nirmal J Ghimire, Aaron M Jones, Grant Aivazian, Jiaqiang Yan, David G Mandrus, Di Xiao, Wang Yao, Xiaodong Xu, None, Electrical control of neutral and charged excitons in a monolayer semiconductor Nature Communications. ,vol. 4, pp. 1474- ,(2013) , 10.1038/NCOMMS2498
Anthony Ayari, Enrique Cobas, Ololade Ogundadegbe, Michael S. Fuhrer, Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides Journal of Applied Physics. ,vol. 101, pp. 014507- ,(2007) , 10.1063/1.2407388
Kallol Roy, Medini Padmanabhan, Srijit Goswami, T. Phanindra Sai, Sanjeev Kaushal, Arindam Ghosh, Optically active heterostructures of graphene and ultrathin MoS2 Solid State Communications. ,vol. 175-176, pp. 35- 42 ,(2013) , 10.1016/J.SSC.2013.09.021
Han Liu, Adam T. Neal, Peide D. Ye, Channel Length Scaling of MoS2 MOSFETs ACS Nano. ,vol. 6, pp. 8563- 8569 ,(2012) , 10.1021/NN303513C