High mobility in monolayer MoS 2 devices grown by chemical vapor deposition

摘要: Monolayer (1L) two-dimensional (2D) semiconductors such as MoS 2 have garnered attention for highly scaled optoelectronics [1,2], due to their sub-nm thickness and direct band gap. For practical applications, films must be grown on large areas with good electrical properties. However, the highest reported mobility values of 1L by chemical vapor deposition (CVD) date been below 20 cm2/V/s, only isolated single crystals [3,4]. Here we demonstrate CVD-grown continuous mobilities comparable those exfoliated samples over a range temperatures (T = 80–500 K) carrier densities (up n ≈ 5×1012 cm−2). We also current density (∼275 µA/µm) at 300 K an 80 nm channel length FET built from .