Method of substrate treatment, computer-readable recording medium, substrate treating apparatus and substrate treating system

作者: Kazuyoshi Yamazaki , Kouji Shimomura , Miki Aruga , Shintaro Aoyama

DOI:

关键词: DielectricBiomedical engineeringNitrogen atomOptoelectronicsMaterials scienceSubstrate (printing)

摘要: A method of substrate treatment comprising, with the use a sheet-feed treating apparatus provided first position for introducing nitrogen atoms in highly dielectric film and second heat film, sequentially delivering multiple substrates to be treated one by positions thereby carry out atom introduction heating on treated, wherein after position, resultant is begun within 30 sec.

参考文章(8)
M. A. Quevedo-Lopez, J. J. Chambers, M. R. Visokay, A. Shanware, L. Colombo, Thermal stability of hafnium–silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy Applied Physics Letters. ,vol. 87, pp. 012902- ,(2005) , 10.1063/1.1977184
Seiji Inumiya, Takayoshi Miura, Kiyoshi Shirai, Takeo Matsuki, Kazuyoshi Torii, Yasuo Nara, Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing Japanese Journal of Applied Physics. ,vol. 45, pp. 2898- 2902 ,(2006) , 10.1143/JJAP.45.2898
Yusuke Fukuchi, Processing apparatus and method ,(2004)
Takayuki Ohba, Shiqin Xiao, Method of forming a dielectric film ,(2005)
鎭明 財満, 満男 坂下, Mitsuo Sakashita, Akira Sakai, 幸夫 安田, 酒井 朗, Yukio Yasuda, Shizuaki Zaima, 亮也 高橋, Akinari Takahashi, Method of manufacturing semiconductor device having insulation film, and semiconductor device ,(2004)
英司 長谷川, Eiji Hasegawa, Semiconductor device and manufacturing method of same ,(2003)