GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions
作者： Ryo Kozono , Sanji Yoon , Jianbo Liang , Naoteru Shigekawa
DOI: 10.1109/PVSC40753.2019.8980757
关键词: Bonding strength 、 Photoemission spectroscopy 、 Optoelectronics 、 Cell structure 、 Materials science 、 Etching (microfabrication) 、 Substrate (electronics) 、 Double junction 、 Yield (engineering) 、 Layer (electronics)
摘要: A GaAs/Si double-junction cell is fabricated by directly bonding a GaAs single-junction structure grown on (001) substrate to n-on-p Si sub-cell and separating the using sacrificial layer etching. Before etching, III-V/Si junction annealed at 300 ℃ for 1 hour so as recrystallize interface achieve an enough strength based results of hard X-ray photoemission spectroscopy. We obtain yield ~80% after confirm that normally operates measuring its current-voltage spectral-response characteristics.
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