GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance
作者： Naoteru Shigekawa , Tomoya Hara , Tomoki Ogawa , Jianbo Liang , Takefumi Kamioka
DOI: 10.1109/JPHOTOV.2018.2802203
关键词: Equivalent series resistance 、 Spectral response 、 Multijunction photovoltaic cell 、 Indium tin oxide 、 Fill factor 、 Optoelectronics 、 Parasitic element 、 Materials science
摘要: Effects of GaAs/indium tin oxide (ITO)/Si junctions on III-V-on-Si multijunction solar cells are examined by fabricating and characterizing InGaP/GaAs/ITO/Si triple-junction (3J) cells. The 3J fabricated evaporating $\approx$ 100-nm-thick ITO films the surfaces Si bottom bonding InGaP/GaAs double-junction (2J) subcells using surface-activated technologies at room temperature. current–voltage characteristics with $p^{+}$ -GaAs/ITO/ $n^{+}$ -Si compared those an InGaP/GaAs/Si cell. parasitic resistance respective is estimated analyzing their in dark. We find that cell junction shows lowest resistance, which origin its differential open-circuit voltage highest fill factor. This means promising for improving performances hybrid spectral response these indicate thickness must be optimized.
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