Band structures of Si/InGaP heterojunctions by using surface-activated bonding

摘要: The band structure of p-Si/n-InGaP heterojunctions fabricated by using surface-activated bonding (SAB) was investigated measuring their current-voltage (I-V) and capacitance-voltage (C-V) characteristics. I-V characteristics junctions showed rectifying properties similarly to p-Si/n-GaAs junctions. conduction discontinuity the determined be 0.41 eV from C-V measurements, which indicated that Si/InGaP revealed type-I line-up in contrast Si/GaAs (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)