Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si

摘要: We fabricated p+-, p-, and p−-Si/n-4H-SiC junctions by surface activated bonding (SAB). investigated their electrical properties measuring current–voltage (I–V) characteristics at raised ambient temperatures, capacitance–voltage (C–V) various frequencies, capacitance–frequency (C–f) room temperature. The activation energy of reverse-bias current the flat-band voltage in C–V characteristics, which were estimated to be 0.97–1.01 eV 0.83–0.84 V, respectively, insensitive concentrations acceptors Si substrates. relaxation times from C–f 0.8 1.5 µs for p-Si/n-4H-SiC junctions, respectively. results are explained a scheme wherein Fermi level pinning occurs Si/4H-SiC interfaces SAB.