Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions
作者： J. Liang , S. Nishida , M. Arai , N. Shigekawa
DOI: 10.1063/1.4873113
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摘要: The effects of thermal annealing process on the interface in p+-Si/n-SiC heterojunctions fabricated by using surface-activated bonding are investigated. It is found measuring their current-voltage (I-V) characteristics that reverse-bias current and ideality factor decreased to 2.98 × 10−6 mA/cm2 1.03, respectively, junctions at 1000 °C. Observation transmission electron microscopy indicates an amorphous layer with a thickness ∼6 nm formed unannealed interface, which vanishes after No structural defects observed even such high temperature.
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AN Nazarov, Ya N Vovk, VS Lysenko, VI Turchanikov, VA Scryshevskii, S Ashok, None, Carrier transport in amorphous SiC/crystalline silicon heterojunctions Journal of Applied Physics. ,vol. 89, pp. 4422- 4428 ,(2001) , 10.1063/1.1355698
A. Pérez-Tomás, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby, V. Shah, T. Grasby, Characterization and modeling of n-n Si∕SiC heterojunction diodes Journal of Applied Physics. ,vol. 102, pp. 014505- ,(2007) , 10.1063/1.2752148
Fabrizio Roccaforte, Francesco La Via, Vito Raineri, Roberto Pierobon, Enrico Zanoni, Richardson’s constant in inhomogeneous silicon carbide Schottky contacts Journal of Applied Physics. ,vol. 93, pp. 9137- 9144 ,(2003) , 10.1063/1.1573750
Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, Naoteru Shigekawa, Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding Applied Physics Express. ,vol. 6, pp. 021801- ,(2013) , 10.7567/APEX.6.021801
J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, N. Shigekawa, Electrical properties of Si/Si interfaces by using surface-activated bonding Journal of Applied Physics. ,vol. 114, pp. 183703- ,(2013) , 10.1063/1.4829676
T. Sugii, T. Aoyama, T. Ito, Polycrystalline SiC for a Wide‐Bandgap Emitter of Si‐HBTs Journal of The Electrochemical Society. ,vol. 136, pp. 3111- 3115 ,(1989) , 10.1149/1.2096410
L Magafas, N Georgoulas, A Thanailakis, Electrical properties of a-SiC/c-Si(p) heterojunctions Semiconductor Science and Technology. ,vol. 7, pp. 1363- 1368 ,(1992) , 10.1088/0268-1242/7/11/014
Chuanxin Lian, Huili Grace Xing, Yu-Chia Chang, Nick Fichtenbaum, Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions Applied Physics Letters. ,vol. 93, pp. 112103- ,(2008) , 10.1063/1.2983648
H. Takagi, K. Kikuchi, R. Maeda, T. R. Chung, T. Suga, Surface activated bonding of silicon wafers at room temperature Applied Physics Letters. ,vol. 68, pp. 2222- 2224 ,(1996) , 10.1063/1.115865
M. M. R. Howlader, T. Suga, F. Zhang, T. H. Lee, M. J. Kim, Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bonded Wafers at Room Temperature Electrochemical and Solid State Letters. ,vol. 13, ,(2010) , 10.1149/1.3272957