Effects of interface state charges on the electrical properties of Si/SiC heterojunctions
作者： J. Liang , S. Nishida , T. Hayashi , M. Arai , N. Shigekawa
DOI: 10.1063/1.4898674
关键词: Voltage 、 Materials science 、 Condensed matter physics 、 Discontinuity (geotechnical engineering) 、 Conduction band 、 Fermi level 、 Electronic density of states 、 Silicon 、 Heterojunction
摘要: Electrical properties of p−-Si/n−-SiC, p-Si/n−-SiC, p+-Si/n−-SiC, and n+-Si/n−-SiC heterojunctions fabricated by using surface-activated bonding are investigated. Their flat-band voltages obtained from capacitance-voltage (C-V) measurements found to be ∼0.92 eV, which suggests that the Fermi level should pinned at interface. An analysis charge neutral model reveals C-V characteristics sensitive density interface states. The measured p+-Si/n−-SiC junctions in quantitative agreement with modeled ones for states conduction-band discontinuity 2.3 × 1013 cm−2 eV−1 0.3 eV, respectively.
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